2sb1123 / 2sd1623 no.1727-1/8 applicaitons ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of fbet, mbit processes ? low collector-to-emitter saturation voltage ? large current capacity and wide aso ? fast switching speed ? the ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid ic?s further miniaturization speci cations ( ) : 2sb1123 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)4 a continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : EN1727f 82212 tkim/31010ea tkim/n1501 tsim/92098 ha (kt)/4107 ki/n275 ki/3045 mw, ts sanyo semiconductors data sheet 2sb1123/2sd1623 pnp / npn epitaxial planar silicon transistor high-current switching applications http://www.sanyosemi.com/en/network/ product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sb1123s-td-e 2sb1123t-td-e 2sd1623s-td-e 2sd1623t-td-e bf lot no. df lot no. 2sd1623 2sb1123 rank rank 2 3 1 2sd1623 2 3 1 2sb1123
2sb1123 / 2sd1623 no.1727-2/8 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 0.5 w when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)50v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe 1v ce =(--)2v, i c =(--)100ma 100* 560* h fe 2v ce =(--)2v, i c =(--)1.5a 40 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (22)12 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)50ma (--0.3)0.15 (--0.7)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)1a, i b =(--)50ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (60)60 ns storage time t stg (450)550 ns fall time t f (30)30 ns * : the 2sb1123 / 2sd1623 are classi ed by 100ma hfe as follows : rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 switching time test circuit ordering information device package shipping memo 2sb1123s-td-e pcp 1,000pcs./reel pb free 2sb1123t-td-e pcp 1,000pcs./reel 2sd1623s-td-e pcp 1,000pcs./reel 2sd1623t-td-e pcp 1,000pcs./reel v r r b 25v --5v + + 50 input outpu t r l =50 100 f 470 f pw=20 s i c =10i b1 = --10i b2 =500ma (for pnp, the polarity is reversed) i b1 d.c. 1% i b2
2sb1123 / 2sd1623 no.1727-3/8 --2.4 --1.6 --1.2 --0.8 --0.4 --2.0 0 0 --0.4 --0.8 --2.4 --2.0 --1.6 --1.2 i c -- v ce i b =0ma itr08891 2sb1123 pulse --2ma --8ma --6ma --4ma --20ma --10ma --50ma --1200 --800 --600 --400 --200 --1000 0 0 --2 --4 --12 --10 -- 8 -- 6 i c -- v ce i b =0ma itr08893 2sb1123 pulse --3ma --2ma --1ma --7ma --6ma --5ma --4ma 1200 800 600 400 200 1000 0 024 12 10 8 6 i c -- v ce i b =0ma itr08894 2sd1623 pulse 3ma 2ma 1ma 7ma 6ma 5ma 4ma 2.4 1.6 1.2 0.8 0.4 2.0 0 0 0.4 0.8 2.4 2.0 1.6 1.2 i c -- v ce i b =0ma itr08892 2sd1623 pulse 2ma 8ma 4ma 25ma 15ma 50ma 40ma collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma h fe -- i c 2 3 5 10 7 1000 2 3 5 7 100 23 5 --10 23 5 5 --100 23 7 7 --1000 itr08897 2sb1123 v ce = --2v h fe -- i c 2 3 5 10 7 1000 2 3 5 7 100 23 5 10 23 5 5 100 23 7 7 1000 itr08898 2sd1623 v ce =2v collector current, i c -- ma dc current gain, h fe collector current, i c -- ma dc current gain, h fe 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 --1200 --1000 --800 --600 --400 --200 0 i c -- v be itr08895 2sb1123 v ce = --2v 0 0.2 0.4 0.6 0.8 1.2 1.0 1200 1000 800 600 400 200 0 i c -- v be itr08896 2sd1623 v ce =2v base-to-emitter voltage, v be -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma
2sb1123 / 2sd1623 no.1727-4/8 f t -- i c cob -- v cb --1.0 --10 7 3 5 100 7 5 10 2 2 27 35 --100 27 35 itr08901 2 3 5 10 7 1000 2 3 5 7 100 23 5 --10 23 5 --100 23 7 7 --1000 itr08899 2sb1123 v cb =10v 2sb1123 f=1mhz f t -- i c 2 3 5 10 7 1000 2 3 5 7 100 23 5 10 23 5 100 23 7 7 1000 itr08900 2sd1623 v cb =10v cob -- v cb 1.0 10 7 3 5 100 7 5 10 2 27 35 100 27 35 itr08902 2sd1623 f=1mhz collector current, i c -- ma gain-bandwidth product, f t -- mhz collector current, i c -- ma gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf a s o 1.0 0.1 5 10 5 3 3 2 2 5 3 2 1.0 10 257 3 100 257 3 57 itr08906 0 0.8 0.6 0.5 0.4 0.2 0 20 40 60 100 120 160 140 80 p c -- ta it04221 2sb1123 / 2sd1623 i c =2a i cp =4a 10ms 1ms 100ms dc operation 2sb1123 / 2sd1623 ta=25 c single pulse for pnp, minus sign is omitted mounted on a ceramic board (250mm 2 ? 0.8mm) collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w ambient temperature, ta -- c 2 5 2 5 2 5 2 5 --1.0 --0.1 --0.01 --100 --10 23 57 7 --10 23 3 5 --100 2 --1000 itr08903 v ce (sat) -- i c 2sb1123 i c / i b =20 2 5 2 5 2 5 2 5 1.0 0.1 0.01 100 10 23 57 7 10 23 3 5 100 2 1000 itr08904 v ce (sat) -- i c 2sd1623 i c / i b =20 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v no heat sink
2sb1123 / 2sd1623 no.1727-5/8 0 1.6 1.4 1.2 1.3 0.8 1.0 0.6 0.4 0.2 0 20 40 60 100 120 160 140 80 p c -- ta it04222 2sb1123 / 2sd1623 collector dissipation, p c -- w ambient temperature, ta -- c mounted on a ceramic board(250mm 2 ? 0.8mm)
2sb1123 / 2sd1623 no.1727-6/8 bag packing speci cation 2sb1123s-td-e, 2sb1123t-td-e, 2sd1623s-td-e, 2sd1623t-td-e
2sb1123 / 2sd1623 no.1727-7/8 outline drawing land pattern example 2sb1123s-td-e, 2sb1123t-td-e, 2sd1623s-td-e, 2sd1623t-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
2sb1123 / 2sd1623 ps no.1727-8/8 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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